RN2507(TE85L Datasheet
RN2507(TE85L Datasheet
Total Pages: 6
Size: 317.79 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
RN2507(TE85L,F)
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 300mW Mounting Type Surface Mount Package / Case SC-74A, SOT-753 Supplier Device Package SMV |
