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RN2971(TE85L Datasheet

RN2971(TE85L Datasheet
Total Pages: 6
Size: 278.64 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: RN2971(TE85L,F)
RN2971(TE85L Datasheet Page 1
RN2971(TE85L Datasheet Page 2
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RN2971(TE85L Datasheet Page 6
RN2971(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6