RP1A090ZPTR Datasheet
RP1A090ZPTR Datasheet
Total Pages: 6
Size: 167.03 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RP1A090ZPTR
|
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 12mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 59nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 6V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MPT6 Package / Case 6-SMD, Flat Leads |
