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RP1L055SNTR Datasheet

RP1L055SNTR Datasheet
Total Pages: 7
Size: 532.33 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RP1L055SNTR
RP1L055SNTR Datasheet Page 1
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RP1L055SNTR Datasheet Page 7
RP1L055SNTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

49mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MPT6

Package / Case

6-SMD, Flat Leads