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RSR020P03TL Datasheet

RSR020P03TL Datasheet
Total Pages: 5
Size: 70.63 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RSR020P03TL
RSR020P03TL Datasheet Page 1
RSR020P03TL Datasheet Page 2
RSR020P03TL Datasheet Page 3
RSR020P03TL Datasheet Page 4
RSR020P03TL Datasheet Page 5
RSR020P03TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

120mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

4.3nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

TSMT3

Package / Case

SC-96