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RTM002P02T2L Datasheet

RTM002P02T2L Datasheet
Total Pages: 3
Size: 75.92 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RTM002P02T2L
RTM002P02T2L Datasheet Page 1
RTM002P02T2L Datasheet Page 2
RTM002P02T2L Datasheet Page 3
RTM002P02T2L

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VMT3

Package / Case

SOT-723