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RTQ030P02TR Datasheet

RTQ030P02TR Datasheet
Total Pages: 5
Size: 95.04 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RTQ030P02TR
RTQ030P02TR Datasheet Page 1
RTQ030P02TR Datasheet Page 2
RTQ030P02TR Datasheet Page 3
RTQ030P02TR Datasheet Page 4
RTQ030P02TR Datasheet Page 5
RTQ030P02TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

80mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6