RUM001L02T2CL Datasheet
RUM001L02T2CL Datasheet
Total Pages: 12
Size: 2,169.13 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RUM001L02T2CL
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 3.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 7.1pF @ 10V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VMT3 Package / Case SOT-723 |
