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SH8M11TB1 Datasheet

SH8M11TB1 Datasheet
Total Pages: 11
Size: 617.32 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: SH8M11TB1
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SH8M11TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.5A

Rds On (Max) @ Id, Vgs

98mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1.9nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

85pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP