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SI1012R-T1-E3 Datasheet

SI1012R-T1-E3 Datasheet
Total Pages: 8
Size: 166.47 KB
Vishay Siliconix
This datasheet covers 3 part numbers: SI1012R-T1-E3, SI1012X-T1-GE3, SI1012R-T1-GE3
SI1012R-T1-E3 Datasheet Page 1
SI1012R-T1-E3 Datasheet Page 2
SI1012R-T1-E3 Datasheet Page 3
SI1012R-T1-E3 Datasheet Page 4
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SI1012R-T1-E3 Datasheet Page 7
SI1012R-T1-E3 Datasheet Page 8
SI1012R-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

700mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A

SI1012X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

700mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-3

Package / Case

SC-89, SOT-490

SI1012R-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

700mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A