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SI1046X-T1-GE3 Datasheet

SI1046X-T1-GE3 Datasheet
Total Pages: 5
Size: 120.04 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI1046X-T1-GE3
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SI1046X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

420mOhm @ 606mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.49nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

66pF @ 10V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-3

Package / Case

SC-89, SOT-490