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SI1069X-T1-E3 Datasheet

SI1069X-T1-E3 Datasheet
Total Pages: 8
Size: 151.55 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI1069X-T1-E3, SI1069X-T1-GE3
SI1069X-T1-E3 Datasheet Page 1
SI1069X-T1-E3 Datasheet Page 2
SI1069X-T1-E3 Datasheet Page 3
SI1069X-T1-E3 Datasheet Page 4
SI1069X-T1-E3 Datasheet Page 5
SI1069X-T1-E3 Datasheet Page 6
SI1069X-T1-E3 Datasheet Page 7
SI1069X-T1-E3 Datasheet Page 8
SI1069X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

184mOhm @ 940mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.86nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

308pF @ 10V

FET Feature

-

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

SI1069X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

184mOhm @ 940mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.86nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

308pF @ 10V

FET Feature

-

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666