Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI1315DL-T1-GE3 Datasheet

SI1315DL-T1-GE3 Datasheet
Total Pages: 11
Size: 247.21 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI1315DL-T1-GE3
SI1315DL-T1-GE3 Datasheet Page 1
SI1315DL-T1-GE3 Datasheet Page 2
SI1315DL-T1-GE3 Datasheet Page 3
SI1315DL-T1-GE3 Datasheet Page 4
SI1315DL-T1-GE3 Datasheet Page 5
SI1315DL-T1-GE3 Datasheet Page 6
SI1315DL-T1-GE3 Datasheet Page 7
SI1315DL-T1-GE3 Datasheet Page 8
SI1315DL-T1-GE3 Datasheet Page 9
SI1315DL-T1-GE3 Datasheet Page 10
SI1315DL-T1-GE3 Datasheet Page 11
SI1315DL-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

900mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

336mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

112pF @ 4V

FET Feature

-

Power Dissipation (Max)

300mW (Ta), 400mW (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

Package / Case

SC-70, SOT-323