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SI1557DH-T1-E3 Datasheet

SI1557DH-T1-E3 Datasheet
Total Pages: 9
Size: 134.83 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI1557DH-T1-E3
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SI1557DH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

1.2A, 770mA

Rds On (Max) @ Id, Vgs

235mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

470mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)