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SI1900DL-T1-GE3 Datasheet

SI1900DL-T1-GE3 Datasheet
Total Pages: 9
Size: 219.31 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI1900DL-T1-GE3, SI1900DL-T1-E3
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SI1900DL-T1-GE3 Datasheet Page 9
SI1900DL-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

630mA (Ta), 590mA (Ta)

Rds On (Max) @ Id, Vgs

480mOhm @ 590mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

300mW, 270mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6

SI1900DL-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

590mA

Rds On (Max) @ Id, Vgs

480mOhm @ 590mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

270mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)