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SI3127DV-T1-GE3 Datasheet

SI3127DV-T1-GE3 Datasheet
Total Pages: 11
Size: 246.53 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI3127DV-T1-GE3
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SI3127DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta), 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

89mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

833pF @ 20V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 4.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6