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SI4447DY-T1-GE3 Datasheet

SI4447DY-T1-GE3 Datasheet
Total Pages: 6
Size: 103.12 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI4447DY-T1-GE3, SI4447DY-T1-E3
SI4447DY-T1-GE3 Datasheet Page 1
SI4447DY-T1-GE3 Datasheet Page 2
SI4447DY-T1-GE3 Datasheet Page 3
SI4447DY-T1-GE3 Datasheet Page 4
SI4447DY-T1-GE3 Datasheet Page 5
SI4447DY-T1-GE3 Datasheet Page 6
SI4447DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

15V, 10V

Rds On (Max) @ Id, Vgs

72mOhm @ 4.5A, 15V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

805pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

SI4447DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

15V, 10V

Rds On (Max) @ Id, Vgs

72mOhm @ 4.5A, 15V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

805pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)