Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4463CDY-T1-GE3 Datasheet

SI4463CDY-T1-GE3 Datasheet
Total Pages: 9
Size: 167.68 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI4463CDY-T1-GE3
SI4463CDY-T1-GE3 Datasheet Page 1
SI4463CDY-T1-GE3 Datasheet Page 2
SI4463CDY-T1-GE3 Datasheet Page 3
SI4463CDY-T1-GE3 Datasheet Page 4
SI4463CDY-T1-GE3 Datasheet Page 5
SI4463CDY-T1-GE3 Datasheet Page 6
SI4463CDY-T1-GE3 Datasheet Page 7
SI4463CDY-T1-GE3 Datasheet Page 8
SI4463CDY-T1-GE3 Datasheet Page 9
SI4463CDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

13.6A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

162nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

4250pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)