Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4532ADY-T1-GE3 Datasheet

SI4532ADY-T1-GE3 Datasheet
Total Pages: 10
Size: 178.23 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI4532ADY-T1-GE3, SI4532ADY-T1-E3
SI4532ADY-T1-GE3 Datasheet Page 1
SI4532ADY-T1-GE3 Datasheet Page 2
SI4532ADY-T1-GE3 Datasheet Page 3
SI4532ADY-T1-GE3 Datasheet Page 4
SI4532ADY-T1-GE3 Datasheet Page 5
SI4532ADY-T1-GE3 Datasheet Page 6
SI4532ADY-T1-GE3 Datasheet Page 7
SI4532ADY-T1-GE3 Datasheet Page 8
SI4532ADY-T1-GE3 Datasheet Page 9
SI4532ADY-T1-GE3 Datasheet Page 10
SI4532ADY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.7A, 3A

Rds On (Max) @ Id, Vgs

53mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.13W, 1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4532ADY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.7A, 3A

Rds On (Max) @ Id, Vgs

53mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.13W, 1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO