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SI4563DY-T1-GE3 Datasheet

SI4563DY-T1-GE3 Datasheet
Total Pages: 12
Size: 130.7 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI4563DY-T1-GE3, SI4563DY-T1-E3
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SI4563DY-T1-GE3 Datasheet Page 12
SI4563DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

16mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2390pF @ 20V

Power - Max

3.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4563DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

16mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2390pF @ 20V

Power - Max

3.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO