SI4564DY-T1-GE3 Datasheet
SI4564DY-T1-GE3 Datasheet
Total Pages: 12
Size: 148.77 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI4564DY-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 10A, 9.2A Rds On (Max) @ Id, Vgs 17.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 855pF @ 20V Power - Max 3.1W, 3.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
