SI4638DY-T1-E3 Datasheet
SI4638DY-T1-E3 Datasheet
Total Pages: 7
Size: 103.18 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI4638DY-T1-E3
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Manufacturer Vishay Siliconix Series SkyFET®, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4190pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta), 5.9W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
