SI4774DY-T1-GE3 Datasheet
SI4774DY-T1-GE3 Datasheet
Total Pages: 9
Size: 203.03 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI4774DY-T1-GE3
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Manufacturer Vishay Siliconix Series SkyFET®, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1025pF @ 15V FET Feature Schottky Diode (Body) Power Dissipation (Max) 5W (Tc) Operating Temperature -55°C ~ 150°C (TA) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
