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SI4909DY-T1-GE3 Datasheet

SI4909DY-T1-GE3 Datasheet
Total Pages: 9
Size: 200.62 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI4909DY-T1-GE3
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SI4909DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

27mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 20V

Power - Max

3.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO