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SI4922BDY-T1-GE3 Datasheet

SI4922BDY-T1-GE3 Datasheet
Total Pages: 9
Size: 181.83 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI4922BDY-T1-GE3, SI4922BDY-T1-E3
SI4922BDY-T1-GE3 Datasheet Page 1
SI4922BDY-T1-GE3 Datasheet Page 2
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SI4922BDY-T1-GE3 Datasheet Page 8
SI4922BDY-T1-GE3 Datasheet Page 9
SI4922BDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

16mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2070pF @ 15V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4922BDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

16mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2070pF @ 15V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO