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SI5415EDU-T1-GE3 Datasheet

SI5415EDU-T1-GE3 Datasheet
Total Pages: 9
Size: 169.53 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI5415EDU-T1-GE3
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SI5415EDU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

9.8mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® ChipFet Single

Package / Case

PowerPAK® ChipFET™ Single