Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI5429DU-T1-GE3 Datasheet

SI5429DU-T1-GE3 Datasheet
Total Pages: 9
Size: 166.53 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI5429DU-T1-GE3
SI5429DU-T1-GE3 Datasheet Page 1
SI5429DU-T1-GE3 Datasheet Page 2
SI5429DU-T1-GE3 Datasheet Page 3
SI5429DU-T1-GE3 Datasheet Page 4
SI5429DU-T1-GE3 Datasheet Page 5
SI5429DU-T1-GE3 Datasheet Page 6
SI5429DU-T1-GE3 Datasheet Page 7
SI5429DU-T1-GE3 Datasheet Page 8
SI5429DU-T1-GE3 Datasheet Page 9
SI5429DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2320pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® ChipFet Dual

Package / Case

PowerPAK® ChipFET™ Dual