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SI5461EDC-T1-GE3 Datasheet

SI5461EDC-T1-GE3 Datasheet
Total Pages: 6
Size: 95.4 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI5461EDC-T1-GE3, SI5461EDC-T1-E3
SI5461EDC-T1-GE3 Datasheet Page 1
SI5461EDC-T1-GE3 Datasheet Page 2
SI5461EDC-T1-GE3 Datasheet Page 3
SI5461EDC-T1-GE3 Datasheet Page 4
SI5461EDC-T1-GE3 Datasheet Page 5
SI5461EDC-T1-GE3 Datasheet Page 6
SI5461EDC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

SI5461EDC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead