SI5519DU-T1-GE3 Datasheet
SI5519DU-T1-GE3 Datasheet
Total Pages: 12
Size: 138.59 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI5519DU-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 36mOhm @ 6.1A, 4.5V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V Power - Max 10.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® ChipFET™ Dual Supplier Device Package PowerPAK® ChipFet Dual |
