SI5922DU-T1-GE3 Datasheet
SI5922DU-T1-GE3 Datasheet
Total Pages: 7
Size: 169.54 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI5922DU-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Rds On (Max) @ Id, Vgs 19.2mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 765pF @ 15V Power - Max 10.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® ChipFET™ Dual Supplier Device Package PowerPAK® ChipFet Dual |
