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SI5933CDC-T1-E3 Datasheet

SI5933CDC-T1-E3 Datasheet
Total Pages: 11
Size: 246.9 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI5933CDC-T1-E3, SI5933CDC-T1-GE3
SI5933CDC-T1-E3 Datasheet Page 1
SI5933CDC-T1-E3 Datasheet Page 2
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SI5933CDC-T1-E3 Datasheet Page 11
SI5933CDC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A

Rds On (Max) @ Id, Vgs

144mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

276pF @ 10V

Power - Max

2.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

SI5933CDC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A

Rds On (Max) @ Id, Vgs

144mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

276pF @ 10V

Power - Max

2.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™