SI6562CDQ-T1-GE3 Datasheet
SI6562CDQ-T1-GE3 Datasheet
Total Pages: 17
Size: 249.73 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI6562CDQ-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.7A, 6.1A Rds On (Max) @ Id, Vgs 22mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V Power - Max 1.6W, 1.7W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
