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SI6913DQ-T1-E3 Datasheet

SI6913DQ-T1-E3 Datasheet
Total Pages: 11
Size: 221.11 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI6913DQ-T1-E3, SI6913DQ-T1-GE3
SI6913DQ-T1-E3 Datasheet Page 1
SI6913DQ-T1-E3 Datasheet Page 2
SI6913DQ-T1-E3 Datasheet Page 3
SI6913DQ-T1-E3 Datasheet Page 4
SI6913DQ-T1-E3 Datasheet Page 5
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SI6913DQ-T1-E3 Datasheet Page 7
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SI6913DQ-T1-E3 Datasheet Page 9
SI6913DQ-T1-E3 Datasheet Page 10
SI6913DQ-T1-E3 Datasheet Page 11
SI6913DQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.9A

Rds On (Max) @ Id, Vgs

21mOhm @ 5.8A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 400µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

SI6913DQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.9A

Rds On (Max) @ Id, Vgs

21mOhm @ 5.8A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 400µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP