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SI6981DQ-T1-GE3 Datasheet

SI6981DQ-T1-GE3 Datasheet
Total Pages: 6
Size: 102.57 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI6981DQ-T1-GE3, SI6981DQ-T1-E3
SI6981DQ-T1-GE3 Datasheet Page 1
SI6981DQ-T1-GE3 Datasheet Page 2
SI6981DQ-T1-GE3 Datasheet Page 3
SI6981DQ-T1-GE3 Datasheet Page 4
SI6981DQ-T1-GE3 Datasheet Page 5
SI6981DQ-T1-GE3 Datasheet Page 6
SI6981DQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.1A

Rds On (Max) @ Id, Vgs

31mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 300µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

SI6981DQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.1A

Rds On (Max) @ Id, Vgs

31mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 300µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP