Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7463DP-T1-E3 Datasheet

SI7463DP-T1-E3 Datasheet
Total Pages: 12
Size: 311.36 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI7463DP-T1-E3, SI7463DP-T1-GE3
SI7463DP-T1-E3 Datasheet Page 1
SI7463DP-T1-E3 Datasheet Page 2
SI7463DP-T1-E3 Datasheet Page 3
SI7463DP-T1-E3 Datasheet Page 4
SI7463DP-T1-E3 Datasheet Page 5
SI7463DP-T1-E3 Datasheet Page 6
SI7463DP-T1-E3 Datasheet Page 7
SI7463DP-T1-E3 Datasheet Page 8
SI7463DP-T1-E3 Datasheet Page 9
SI7463DP-T1-E3 Datasheet Page 10
SI7463DP-T1-E3 Datasheet Page 11
SI7463DP-T1-E3 Datasheet Page 12
SI7463DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.2mOhm @ 18.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

SI7463DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.2mOhm @ 18.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8