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SI7501DN-T1-GE3 Datasheet

SI7501DN-T1-GE3 Datasheet
Total Pages: 9
Size: 114.24 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI7501DN-T1-GE3, SI7501DN-T1-E3
SI7501DN-T1-GE3 Datasheet Page 1
SI7501DN-T1-GE3 Datasheet Page 2
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SI7501DN-T1-GE3 Datasheet Page 9
SI7501DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.4A, 4.5A

Rds On (Max) @ Id, Vgs

35mOhm @ 7.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.6W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual

SI7501DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.4A, 4.5A

Rds On (Max) @ Id, Vgs

35mOhm @ 7.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.6W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual