Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7772DP-T1-GE3 Datasheet

SI7772DP-T1-GE3 Datasheet
Total Pages: 13
Size: 311.77 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI7772DP-T1-GE3
SI7772DP-T1-GE3 Datasheet Page 1
SI7772DP-T1-GE3 Datasheet Page 2
SI7772DP-T1-GE3 Datasheet Page 3
SI7772DP-T1-GE3 Datasheet Page 4
SI7772DP-T1-GE3 Datasheet Page 5
SI7772DP-T1-GE3 Datasheet Page 6
SI7772DP-T1-GE3 Datasheet Page 7
SI7772DP-T1-GE3 Datasheet Page 8
SI7772DP-T1-GE3 Datasheet Page 9
SI7772DP-T1-GE3 Datasheet Page 10
SI7772DP-T1-GE3 Datasheet Page 11
SI7772DP-T1-GE3 Datasheet Page 12
SI7772DP-T1-GE3 Datasheet Page 13
SI7772DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

SkyFET®, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1084pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 29.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8