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SI8429DB-T1-E1 Datasheet

SI8429DB-T1-E1 Datasheet
Total Pages: 10
Size: 237.1 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI8429DB-T1-E1
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SI8429DB-T1-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

11.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

35mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

1640pF @ 4V

FET Feature

-

Power Dissipation (Max)

2.77W (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA, CSPBGA