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SI8483DB-T2-E1 Datasheet

SI8483DB-T2-E1 Datasheet
Total Pages: 8
Size: 171.08 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI8483DB-T2-E1
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SI8483DB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

26mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1840pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.77W (Ta), 13W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-Micro Foot™ (1.5x1)

Package / Case

6-UFBGA