SI8851EDB-T2-E1 Datasheet
SI8851EDB-T2-E1 Datasheet
Total Pages: 8
Size: 191.32 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8851EDB-T2-E1
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 8mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 10V FET Feature - Power Dissipation (Max) 660mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power Micro Foot® (2.4x2) Package / Case 30-XFBGA |
