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SI8902EDB-T2-E1 Datasheet

SI8902EDB-T2-E1 Datasheet
Total Pages: 10
Size: 243.57 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI8902EDB-T2-E1
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SI8902EDB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.9A

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

1V @ 980µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-MICRO FOOT®CSP

Supplier Device Package

6-Micro Foot™ (2.36x1.56)