SI8902EDB-T2-E1 Datasheet
SI8902EDB-T2-E1 Datasheet
Total Pages: 10
Size: 243.57 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI8902EDB-T2-E1
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.9A Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 1V @ 980µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-MICRO FOOT®CSP Supplier Device Package 6-Micro Foot™ (2.36x1.56) |
