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SIA408DJ-T1-GE3 Datasheet

SIA408DJ-T1-GE3 Datasheet
Total Pages: 9
Size: 184.88 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIA408DJ-T1-GE3
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SIA408DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

36mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.4W (Ta), 17.9W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6