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SIA443DJ-T1-GE3 Datasheet

SIA443DJ-T1-GE3 Datasheet
Total Pages: 7
Size: 105.39 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SIA443DJ-T1-GE3, SIA443DJ-T1-E3
SIA443DJ-T1-GE3 Datasheet Page 1
SIA443DJ-T1-GE3 Datasheet Page 2
SIA443DJ-T1-GE3 Datasheet Page 3
SIA443DJ-T1-GE3 Datasheet Page 4
SIA443DJ-T1-GE3 Datasheet Page 5
SIA443DJ-T1-GE3 Datasheet Page 6
SIA443DJ-T1-GE3 Datasheet Page 7
SIA443DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

SIA443DJ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6