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SIA513DJ-T1-GE3 Datasheet

SIA513DJ-T1-GE3 Datasheet
Total Pages: 14
Size: 296.64 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIA513DJ-T1-GE3
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SIA513DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A

Rds On (Max) @ Id, Vgs

60mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

360pF @ 10V

Power - Max

6.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6 Dual

Supplier Device Package

PowerPAK® SC-70-6 Dual