Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIA814DJ-T1-GE3 Datasheet

SIA814DJ-T1-GE3 Datasheet
Total Pages: 10
Size: 156.37 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIA814DJ-T1-GE3
SIA814DJ-T1-GE3 Datasheet Page 1
SIA814DJ-T1-GE3 Datasheet Page 2
SIA814DJ-T1-GE3 Datasheet Page 3
SIA814DJ-T1-GE3 Datasheet Page 4
SIA814DJ-T1-GE3 Datasheet Page 5
SIA814DJ-T1-GE3 Datasheet Page 6
SIA814DJ-T1-GE3 Datasheet Page 7
SIA814DJ-T1-GE3 Datasheet Page 8
SIA814DJ-T1-GE3 Datasheet Page 9
SIA814DJ-T1-GE3 Datasheet Page 10
SIA814DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

61mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.9W (Ta), 6.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Dual

Package / Case

PowerPAK® SC-70-6 Dual