SIA850DJ-T1-GE3 Datasheet
SIA850DJ-T1-GE3 Datasheet
Total Pages: 9
Size: 111.09 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA850DJ-T1-GE3
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Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 190V Current - Continuous Drain (Id) @ 25°C 950mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 3.8Ohm @ 360mA, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 90pF @ 100V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.9W (Ta), 7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Dual Package / Case PowerPAK® SC-70-6 Dual |
