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SIA929DJ-T1-GE3 Datasheet

SIA929DJ-T1-GE3 Datasheet
Total Pages: 9
Size: 296.93 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIA929DJ-T1-GE3
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SIA929DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Rds On (Max) @ Id, Vgs

64mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

575pF @ 15V

Power - Max

7.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6 Dual

Supplier Device Package

PowerPAK® SC-70-6 Dual