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SIE806DF-T1-GE3 Datasheet

SIE806DF-T1-GE3 Datasheet
Total Pages: 7
Size: 122.9 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SIE806DF-T1-GE3, SIE806DF-T1-E3
SIE806DF-T1-GE3 Datasheet Page 1
SIE806DF-T1-GE3 Datasheet Page 2
SIE806DF-T1-GE3 Datasheet Page 3
SIE806DF-T1-GE3 Datasheet Page 4
SIE806DF-T1-GE3 Datasheet Page 5
SIE806DF-T1-GE3 Datasheet Page 6
SIE806DF-T1-GE3 Datasheet Page 7
SIE806DF-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 15V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PolarPAK® (L)

Package / Case

10-PolarPAK® (L)

SIE806DF-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 15V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PolarPAK® (L)

Package / Case

10-PolarPAK® (L)