Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHB22N65E-GE3 Datasheet

SIHB22N65E-GE3 Datasheet
Total Pages: 9
Size: 213.93 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIHB22N65E-GE3
SIHB22N65E-GE3 Datasheet Page 1
SIHB22N65E-GE3 Datasheet Page 2
SIHB22N65E-GE3 Datasheet Page 3
SIHB22N65E-GE3 Datasheet Page 4
SIHB22N65E-GE3 Datasheet Page 5
SIHB22N65E-GE3 Datasheet Page 6
SIHB22N65E-GE3 Datasheet Page 7
SIHB22N65E-GE3 Datasheet Page 8
SIHB22N65E-GE3 Datasheet Page 9
SIHB22N65E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2415pF @ 100V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB