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SIHF35N60EF-GE3 Datasheet

SIHF35N60EF-GE3 Datasheet
Total Pages: 10
Size: 149.19 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SIHF35N60EF-GE3
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SIHF35N60EF-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

EF

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

97mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

134nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2568pF @ 100V

FET Feature

-

Power Dissipation (Max)

39W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Full Pack

Package / Case

TO-220-3 Full Pack